DMN2009LSS-13

$0.77

Description：MOSFET N-CH 20V 12A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0f5f0686df05 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2009LSS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 12A 8SOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2009LSS-13

Description：MOSFET N-CH 20V 12A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：58.3 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2555 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMN2009LSS-13

DMN2009LSS-13

Single FETs, MOSFETs Overview

The DMN2009LSS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 12 A at +25°C. The device offers low on-state resistance, specified as 8 mΩ at VGS = 10 V with ID = 12 A, 9 mΩ at VGS = 4.5 V with ID = 10 A, and 12 mΩ at VGS = 2.5 V with ID = 8 A. Total gate charge is typically 28.9 nC at VGS = 4.5 V and 58.3 nC at VGS = 10 V. Input capacitance is typically 2555 pF. The component operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified to AEC-Q101 standards for high reliability automotive applications.
Totally lead-free and fully RoHS compliant, containing no purposely added lead.
Halogen and antimony free "Green" device construction.

Single FETs, MOSFETs Applications

Backlighting circuits
Power management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental compliance requirements for the intended market. Ensure that the thermal design accounts for the junction-to-ambient thermal resistance characteristics under actual operating conditions. Validate that the gate drive voltage aligns with the specified thresholds for optimal conduction.

Single FETs, MOSFETs Selection Notes

Select this component when a 20 V rating and high current capability are required in an SO-8 package. Consider the low gate threshold voltage for compatibility with lower logic levels. Evaluate the thermal dissipation capabilities against the expected load profile. Compare the on-resistance values at different gate voltages to determine suitability for specific drive conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of single N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching and power management tasks. The series emphasizes low on-resistance and fast switching speeds to improve overall system efficiency. The SO-8 package provides a compact solution for surface-mount assembly.