DMN2011UFDE-13

$0.18

Description：MOSFET N-CH 20V 11.7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9936cfaceb3a Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2011UFDE-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 11.7A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2011UFDE-13

Description：MOSFET N-CH 20V 11.7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：3372 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：610mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

Single FETs, MOSFETs datasheet and documents for DMN2011UFDE-13

DMN2011UFDE-13

Single FETs, MOSFETs Overview

The DMN2011UFDE-13 is a 20V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source voltage of 20V and a continuous drain current of 11.7A at 25°C. The on-resistance is 9.5mΩ at VGS=4.5V and 11mΩ at VGS=2.5V. Gate-source voltage is ±12V, with a threshold voltage range of 0.4V to 1.0V. Total gate charge is 24nC at VGS=4.5V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low profile design with a 0.6mm height for space-constrained applications
Optimized for high efficiency power management through minimized on-state resistance
Integrated ESD protection on the gate terminal
Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

General purpose interfacing switches
Power management functions
High efficiency power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit reel quantity as documented. Confirm that the component meets RoHS and halogen-free requirements if environmental compliance is mandatory for the assembly process. Ensure the U-DFN2020-6 footprint matches the PCB layout guidelines provided in the mechanical data section.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile N-channel MOSFET with high current capability is required. The device offers superior switching performance alongside low on-resistance. Consider the thermal resistance characteristics and the specific gate drive voltage levels available in the target circuit to ensure optimal conduction and switching behavior.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of silicon N-channel MOSFETs. It utilizes a U-DFN2020-6 case configuration designed for surface mount technology. The product line emphasizes miniaturization while maintaining robust electrical performance for modern electronic systems.