DMN2013UFDEQ-7

Single FETs, MOSFETs Overview

The DMN2013UFDEQ-7 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management. It features an ultra-low on-state resistance of 11mΩ at VGS=4.5V and 13mΩ at VGS=2.5V, supporting continuous drain currents up to 10.5A and 9.4A respectively. The device utilizes a U-DFN2020-6 (Type E) package with a 0.6mm profile and a PCB footprint of 4mm². It includes an ESD-protected gate and low gate threshold voltage. Qualified under AEC-Q101 standards, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance optimized for high efficiency in power management applications
• ESD protected gate structure ensuring robust performance
• Low gate threshold voltage facilitating easy drive compatibility
• Automotive qualified with AEC-Q101 certification and PPAP capability

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions
• Automotive electronic systems requiring specific change control

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS42602 Rev. 1-2 to confirm authenticity. Ensure the ordering suffix matches the required packaging quantity, such as -7 for reels of 3,000 units or -13 for reels of 10,000 units. Confirm that the supplier sources directly from authorized channels to guarantee compliance with RoHS and lead-free specifications.

Single FETs, MOSFETs Selection Notes

Select this MOSFET when designing circuits requiring a compact form factor with a 0.6mm profile and minimal PCB footprint. It is suitable for applications demanding low RDS(ON) to minimize conduction losses while maintaining superior switching performance. Consider its AEC-Q101 qualification if the design targets automotive environments subject to strict quality and reliability standards.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a new generation of devices engineered to balance minimized on-state resistance with efficient switching capabilities. The part is specifically housed in the U-DFN2020-6 (Type E) package, which supports surface-mount technology for automated assembly processes.

Single FETs, MOSFETs Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.