DMN2016LHAB-7

$0.77

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-

SKU:fee68da874fc Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.5A
Rds On (Max) @ Id, Vgs：15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1550pF @ 10V
Power - Max：1.2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2030-6 (Type B)
Grade：-
Qualification：-

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DMN2016LHAB-7

Overview

The DMN2016LHAB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 surface-mount package with an exposed bottom drain contact for thermal management. The device provides a drain-source breakdown voltage (BVDSS) of 20V and a gate-source voltage rating of ±12V. At TA = +25°C, the continuous drain current reaches 7.5A at VGS = 4.5V. The maximum static drain-source on-resistance (RDS(ON)) is 15.5mΩ at VGS = 4.5V and ID = 4.0A. Total gate charge is 8.4nC at VGS = 2.5V and 16nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration with integrated gate protection diodes
Optimized low on-state resistance for high efficiency power management
ESD protected gates rated up to 2kV
Totally lead-free and fully RoHS compliant

Applications

Power Management Functions
Battery Pack Protection
Load Switching

Procurement Notes

Verify the ordering suffix '-7' corresponds to the standard 3,000-unit tape and reel packaging format. Confirm that the U-DFN2030-6 case dimensions align with the target PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.

Selection Notes

Select this component when a compact dual N-channel solution is required for 20V logic-level applications. The U-DFN2030-6 package offers superior thermal dissipation compared to smaller SOT-23 variants. Verify that the 15.5mΩ RDS(ON) meets the specific conduction loss constraints of the design.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2030-6 package, which integrates two independent channels in a single compact form factor. The product is designed to minimize on-state resistance while maintaining fast switching performance.