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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 7.8A X4-DSN1717
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：7.8A (Ta)
- Rds On (Max) @ Id, Vgs：22mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：12.5nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：1438pF @ 10V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-XFBGA, DSBGA
- Supplier Device Package：X4-DSN1717-4
- Grade：-
- Qualification：-
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Overview
The DMN2022UCA4-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a source-source configuration with a breakdown voltage (BVSSS) of 24V and a maximum continuous source current of 7.8A at +25°C. The device achieves a low static on-resistance (RSS(ON)) of 12mΩ at VGS = 4.5V. Packaged in an X4-DSN1717-4 footprint measuring 1.75mm x 1.75mm, it offers a typical height of 0.120mm. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel architecture with integrated gate protection diodes for enhanced ESD resilience.
- Ultra-low profile CSP package designed to minimize board space and facilitate high-density layouts.
- Optimized for high-efficiency power management through minimized on-state resistance and superior switching performance.
Applications
- Battery management systems
- Load switches
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3000 units per carrier. Confirm that the component meets RoHS 3 and halogen-free requirements as specified in the manufacturer's documentation. Ensure compatibility with standard surface mount assembly processes given the NiAu terminal finish.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The 24V rating and 12mΩ on-resistance make it suitable for efficient power switching. Evaluate thermal constraints carefully, as the small footprint requires adequate PCB copper area to manage power dissipation effectively during operation.
Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the X4-DSN1717-4 package, which provides a small form factor compared to traditional SOT packages. The series is engineered to balance low conduction losses with fast switching capabilities for modern portable electronics.
Replacement Considerations
Direct substitutes must match the 24V BVSSS, dual N-channel topology, and X4-DSN1717-4 footprint. Verify pinout compatibility, specifically the shared source connections and individual gate/drain terminals. Cross-reference electrical parameters such as RSS(ON) and Qg to ensure equivalent performance in the target circuit.
FAQ
What is the maximum continuous source current for the DMN2022UCA4?
The maximum continuous source current is 7.8A at an ambient temperature of +25°C and reduces to 6.3A at +70°C.
Does the DMN2022UCA4 include internal protection features?
Yes, the device includes integrated gate protection diodes to provide ESD protection for both channels.
What is the typical height of the X4-DSN1717-4 package?
The typical height of the package is 0.120mm, making it suitable for low-profile applications.
