DMN2022UFDF-13

$0.11

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ba3278fcc4b3 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2022UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 7.9A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2022UFDF-13

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：907 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2022UFDF-13

DMN2022UFDF-13

Single FETs, MOSFETs Overview

The DMN2022UFDF-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a maximum drain-source voltage (BVDSS) of 20V and continuous drain current (ID) up to 7.9A at TA = +25°C. On-resistance (RDS(ON)) is specified as 22mΩ max at VGS = 4.5V, 26mΩ at VGS = 2.5V, 36mΩ at VGS = 1.8V, and 50mΩ at VGS = 1.5V. Gate threshold voltage ranges from 0.5V to 1.0V. Total gate charge is 9.8nC at VGS = 4.5V and 18nC at VGS = 8V. Operating temperature range is -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management.
Features an ultra-low 0.6mm profile ideal for low-profile applications.
Includes ESD protected gate structure.
Totally lead-free and fully RoHS compliant.

Single FETs, MOSFETs Applications

Battery Management Applications
Power Management Functions
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000 units per reel packaging configuration when sourcing components. Confirm that the requested part matches the exact manufacturer designation to ensure compatibility with the documented electrical characteristics and mechanical dimensions provided in the official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact surface-mount solution with low on-resistance across various gate drive voltages. The low gate threshold voltage supports efficient operation with lower logic-level drivers. Ensure thermal management aligns with the specified junction-to-ambient thermal resistance values under the intended operating conditions.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes the U-DFN2020-6 (Type F) case style, which offers a small form factor suitable for space-constrained printed circuit board layouts. The product is designed for general-purpose switching applications within the specified voltage and current ratings.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's documentation for qualified alternatives or cross-reference options. Verify pinout compatibility and electrical parameter equivalence before substituting any other MOSFET part number in existing designs.