DMN2024UFDF-7

$0.43

Description：MOSFET N-CH 20V 7.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b2b1d6301ee4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2024UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 7.1A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2024UFDF-7

Description：MOSFET N-CH 20V 7.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.8 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：647 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：960mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2024UFDF-7

DMN2024UFDF-7

Single FETs, MOSFETs Overview

The DMN2024UFDF is a 20V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage rating of ±10V. The device offers low on-resistance, with RDS(ON) values ranging from 15mΩ to 50mΩ depending on the gate drive voltage (VGS) and current. Continuous drain current (ID) reaches 7.1A at VGS=4.5V and +25°C. Key electrical parameters include a gate threshold voltage (VGS(TH)) of 0.5V to 1.0V, input capacitance (Ciss) of 647pF, and total gate charge (Qg) of 6.5nC at VGS=4.5V. Thermal resistance junction-to-ambient is 130°C/W on a minimal pad layout.

Single FETs, MOSFETs Feature Summary

Designed for high-efficiency power management with minimized on-state resistance and superior switching performance.
Features a low profile of 0.6mm and a compact PCB footprint of 4mm², suitable for space-constrained applications.
Includes an integrated ESD protected gate with internal protection diode.
Compliant with RoHS standards and halogen/antimony free.

Single FETs, MOSFETs Applications

Battery Management Systems
DC-DC Converters
General Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix (-7 or -13) against your reel size requirements, as these denote different quantities per reel. Confirm that the U-DFN2020-6 package dimensions align with your board layout constraints. Ensure thermal design accounts for the specified junction-to-ambient resistance under your expected operating conditions. Check for any automotive qualification requirements if the application demands AEC-Q101 compliance, as standard parts may not meet this unless explicitly stated.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V N-channel MOSFET with low RDS(ON) is required in a small surface-mount package. Consider the gate threshold voltage range (0.5V–1.0V) for compatibility with low-voltage logic drivers. Evaluate the thermal performance based on the intended copper area, as power dissipation capabilities vary significantly between minimal and optimized pad layouts. Verify that the continuous and pulsed drain current ratings meet the peak load demands of the circuit.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel MOSFETs, designed for general-purpose switching and power management. The U-DFN2020-6 package provides a compact solution compared to larger DFN or SOP packages. It is distinct from higher voltage variants in the same family by its 20V BVDSS rating. The device is manufactured using processes optimized for low on-resistance and fast switching speeds.

Single FETs, MOSFETs Replacement Considerations

No direct substitute part numbers are listed in the official datasheet. Cross-referencing requires matching BVDSS, ID, RDS(ON), package type, and pinout. Verify that any alternative device meets the same thermal and electrical specifications for the specific application environment.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current (IDM) is 40A, defined by a 10μs pulse width and a 1% duty cycle.

Is the device suitable for automotive applications?

Standard DMN2024UFDF parts are not automatically qualified for automotive use. For applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly.