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DMN2025U is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is DIODE. Review the specifications below when checking this part for your BOM.
The DMN2025U is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a low on-resistance (RDS(ON)) of 27mΩ at VGS = 4.5V, supporting a continuous drain current of 5.6A at +25°C. The device operates within a junction temperature range of -55°C to +150°C and utilizes a SOT-23 surface-mount package.
Verify the specific ordering suffix when purchasing. The DMN2025U-7 variant is supplied in 3000-unit tape and reel packaging, while the DMN2025U-13 variant comes in 10,000-unit tape and reel packaging. Confirm that the selected part number matches the required quantity carrier for your assembly process.
Select this component for applications requiring a compact SOT-23 footprint with robust 20V blocking capability. Ensure the design accommodates the thermal resistance characteristics, as steady-state power dissipation varies significantly based on PCB copper area and mounting conditions.
This component belongs to the DMN series of N-channel enhancement mode field effect transistors from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance for efficient power handling in small form factors.
Public confirmed substitute part numbers are not available in the provided documentation.
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