DMN2026UVT-7

Single FETs, MOSFETs Overview

The DMN2026UVT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 6.2 A at +25°C. The device offers a maximum on-resistance (Rds(on)) of 24 mΩ at Vgs = 4.5 V and 32 mΩ at Vgs = 2.5 V. Total gate charge (Qg) is 10 nC at Vgs = 4.5 V and 18.4 nC at Vgs = 8 V. Input capacitance (Ciss) is 887 pF at Vds = 10 V. The component operates within a junction temperature range of -55°C to +150°C and is housed in a TSOT-26 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Low input capacitance for efficient switching performance
• Low on-resistance to minimize conduction losses
• Fast switching speed capabilities
• ESD protected gate structure

Single FETs, MOSFETs Applications

• DC-DC Converters
• Power Management Functions
• Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it determines the reel quantity and packaging format. Confirm that the requested part number matches the exact electrical specifications required for the target application circuit. Ensure compliance with RoHS and halogen-free requirements if mandated by the end-use environment. Cross-reference the datasheet revision date to confirm the validity of the provided technical parameters.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and fast switching are critical for high-efficiency power management designs. The 20 V rating suits low-voltage applications requiring moderate current handling up to 6.2 A. Consider the thermal resistance values relative to the PCB layout and copper area available for heat dissipation. Evaluate the gate charge requirements against the driving capability of the control circuitry to ensure optimal switching transitions.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low on-state resistance with superior switching performance. The TSOT-26 package provides a compact form factor suitable for space-constrained surface-mount applications. The product line targets efficiency improvements in portable and industrial power systems.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides or manufacturer cross-reference lists for verified alternatives. Ensure any substitute maintains compatible voltage, current, and package specifications without altering circuit functionality.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGSS) is ±10 V.

Does the device include internal protection features?

Yes, the DMN2026UVT includes an ESD protected gate structure.