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DMN2027UPS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 10A PWRDI5060. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2027UPS-13
- Description：MOSFET N-CH 20V 10A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：12.5mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1091 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for DMN2027UPS-13
Single FETs, MOSFETs Overview
The DMN2027UPS-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and utilizes the POWERDI5060-8 surface-mount package. The device offers a typical static drain-source on-resistance of 12.5mΩ at VGS=4.5V and 19mΩ at VGS=2.5V. Continuous drain current ratings reach 36A at TC=+25°C with VGS=4.5V, or 30A with VGS=2.5V. Total gate charge is specified at 11.6nC for VGS=4.5V operation.
Single FETs, MOSFETs Feature Summary
- Low RDS(ON) minimizes on-state losses
- Small form factor thermally efficient package enables higher density end products
- Qualified to AEC-Q101 standards for high reliability
Single FETs, MOSFETs Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm compliance requirements including RoHS directives and halogen-free status against project specifications. Ensure the POWERDI5060-8 footprint matches the PCB layout design guidelines provided in the datasheet appendix.
Single FETs, MOSFETs Selection Notes
Select this component when low on-state resistance is critical for efficiency in 20V power systems. The POWERDI5060-8 package provides thermal advantages over standard SMD packages. Verify that the required gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2027UPS series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically for high-efficiency power management applications requiring minimized on-state resistance while maintaining superior switching performance.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and thermal resistance values before implementation.
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