DMN2028UFDF-13

Single FETs, MOSFETs Overview

The DMN2028UFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±8 V. The device provides a continuous drain current (I_D) of 7.9 A at +25°C, with a pulsed drain current (I_DM) capability of 40 A. Static drain-source on-resistance (R_DS(ON)) is specified as a maximum of 25 mΩ at V_GS = 4.5 V and 29 mΩ at V_GS = 2.5 V. Total gate charge (Q_g) is typically 9.8 nC at V_GS = 4.5 V. The component operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 surface-mount package.

Single FETs, MOSFETs Feature Summary

• Low profile design with a 0.6mm case height suitable for space-constrained applications
• Integrated ESD protection diode on the gate terminal
• Optimized for low on-state resistance while maintaining fast switching performance
• Compliant with RoHS directives and halogen-free manufacturing standards

Single FETs, MOSFETs Applications

• Battery management systems
• DC-DC converters
• General power management functions

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix '-13' corresponds to the 10,000-unit reel quantity configuration. Confirm the specific revision level of the datasheet matches the production batch requirements. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Check for any automotive-specific qualification requirements if the application demands AEC-Q100 or IATF 16949 compliance.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V N-channel MOSFET is required in a compact U-DFN2020-6 footprint. The device is appropriate for applications needing high efficiency due to its low R_DS(ON) characteristics across various gate drive voltages. Consider the thermal resistance values provided for both ambient and case-mounted conditions during heat dissipation planning. Verify that the 8V gate-source limit aligns with the system's logic level driving capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the U-DFN2020-6 mechanical casing with other devices in the family but differs in electrical ratings such as breakdown voltage and on-resistance. The 'DMN2028UFDF' designation identifies the specific silicon die and electrical parameters, while the suffix indicates packaging.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include DMN2028UFDF-7, which offers identical electrical specifications but is packaged in 3,000-unit reels instead of 10,000-unit reels.