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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.8A POWERDI
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.8A
- Rds On (Max) @ Id, Vgs：20mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：151pF @ 10V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PowerDI3030-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The DMN2028UFDH-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a POWERDI3030-8 surface-mount package with a drain-source voltage (V(BR)DSS) of 20V. The device provides low on-state resistance, specified as a maximum of 20mΩ at VGS=10V and ID=4A, or 22mΩ at VGS=4.5V and ID=4A. Continuous drain current reaches 6.8A at TA=+25°C. Key electrical parameters include a gate threshold voltage of 0.5V to 1V, total gate charge of 8.5nC, input capacitance of 151pF, and a junction-to-ambient thermal resistance of 118°C/W under steady-state conditions.
Feature Summary
- Dual N-channel configuration in a compact POWERDI3030-8 package
- Optimized for high efficiency power management applications
- Includes integrated gate protection diodes
- Qualified to AEC-Q101 automotive standards
Applications
- Power management functions
- Load switching circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and halogen-free requirements if environmental regulations apply to the assembly process. Ensure the design accommodates the specified thermal resistance values for the intended operating environment.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. The 20V rating suits low-voltage DC-DC converters and battery-powered systems. Evaluate the 20mΩ on-resistance against load current requirements to ensure acceptable conduction losses. Verify that the 12V maximum gate-source voltage aligns with the system's logic drive levels.
Part Context
This part belongs to the DMN series from Diodes Incorporated, designed specifically for minimizing on-state resistance while maintaining superior switching performance. The product utilizes a proprietary POWERDI package to enhance thermal dissipation capabilities compared to standard plastic packages.
Replacement Considerations
Direct replacements must match the dual N-channel architecture, 20V breakdown voltage, and POWERDI3030-8 footprint. Verify that alternative components meet the same RDS(on) specifications and AEC-Q101 qualification status to maintain reliability in automotive-grade designs.
