DMN2028USS-13

$0.58

Description：MOSFET N-CH 20V 7.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8d5f90c17229 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2028USS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 7.3A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2028USS-13

Description：MOSFET N-CH 20V 7.3A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：20mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id：1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMN2028USS-13

DMN2028USS-13

Single FETs, MOSFETs Overview

The DMN2028USS-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 20V and a continuous drain current of 9.8A at +25°C. The device offers a typical static drain-source on-resistance of 11mΩ at VGS=4.5V and 15mΩ at VGS=2.5V. Packaged in an SO-8 surface-mount case, it includes built-in ESD protection up to 2kV and complies with AEC-Q101 standards for high reliability.

Single FETs, MOSFETs Feature Summary

Low on-state resistance combined with fast switching speed for efficient power management
Integrated electrostatic discharge (ESD) protection rated up to 2kV
Qualified to AEC-Q101 automotive standards for high reliability applications

Single FETs, MOSFETs Applications

Battery charging systems
DC-DC converters
Portable power adaptors
General power management functions

Single FETs, MOSFETs Procurement Notes

Verify the component datasheet revision number matches the required specification before procurement. Confirm that the SO-8 package dimensions align with the target PCB footprint design. Ensure the ordering suffix corresponds to the correct reel size and tape width requirements for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage N-channel MOSFET with integrated ESD protection is required. The SO-8 package provides a compact solution suitable for space-constrained designs. Evaluate thermal performance against the specified junction-to-ambient resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management applications requiring robust reliability and compact packaging solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package type to ensure functional compatibility during replacement scenarios.