Single FETs, MOSFETs DMN2028UVT-7 product image

DMN2028UVT-7

$0.42
  • Description:MOSFET N-CH 20V 6.2A TSOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:06c3ec4725b1 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

DMN2028UVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.2A TSOT-26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2028UVT-7

  • Description:MOSFET N-CH 20V 6.2A TSOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:856 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TSOT-23-6
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN2028UVT-7

DMN2028UVT-7

Single FETs, MOSFETs Overview

The DMN2028UVT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 6.2A at +25°C. The device exhibits a typical on-resistance of 20mΩ at VGS=4.5V and 32mΩ at VGS=2.5V. Packaged in a TSOT26 case, it offers low input capacitance and fast switching speeds suitable for high-efficiency power management.

Single FETs, MOSFETs Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance
  • Totally lead-free and fully RoHS compliant with halogen and antimony free green device construction
  • Utilizes a TSOT26 molded plastic case with UL flammability classification rating 94V-0

Single FETs, MOSFETs Applications

  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging quantity of 3,000 units. Confirm that the required package type matches the application's surface mount requirements. Ensure compliance with moisture sensitivity level 1 standards during storage and handling procedures.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and fast switching within a 20V limit. Consider the thermal resistance values based on the PCB copper area and via configuration used in the design. Evaluate the gate threshold voltage range to ensure compatibility with the driving logic levels available in the target circuit architecture.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high efficiency power management applications where minimizing conduction losses is critical. The device utilizes silicon technology and is housed in a compact TSOT26 package to facilitate space-constrained designs.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar 20V ratings and comparable on-resistance values. Verify pinout compatibility with the TSOT26 package before substitution. Ensure thermal characteristics and maximum ratings meet or exceed the original design specifications.

Single FETs, MOSFETs FAQ

What is the maximum body diode forward current?

The maximum body diode forward current (IS) is specified as 1.5A.

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

DMN2028UVT-7DMN2028UVT-7
$0.42
Buy Now