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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7.63A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7.63A
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：550pF @ 10V
- Power - Max：1.16W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The DMN2041LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of 20 V and a continuous drain current (ID) of 7.63 A at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 28 mΩ at VGS = 4.5 V and 41 mΩ at VGS = 2.5 V. Total gate charge (Qg) is 7.2 nC at VGS = 4.5 V. Operating temperature ranges from -55°C to +150°C, with total power dissipation rated at 1.16 W.
Feature Summary
- Dual N-channel configuration for high efficiency power management
- Low on-state resistance combined with fast switching performance
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS31964 Rev. 3-2 to confirm authenticity. Ensure the SO-8 package matches the required footprint dimensions. Check for AEC-Q101 qualification if automotive applications are intended. Confirm that the marking code 'N2041LD' aligns with the specific manufacturing site requirements.
Selection Notes
Select this component when a low-voltage, dual N-channel solution is required for compact designs. The SO-8 package provides a balance between thermal performance and board space. Consider the RDS(ON) values at different gate voltages to ensure compatibility with the driving circuit logic levels.
Part Context
This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the SO-8 mechanical outline with other devices in the family but differs in electrical ratings such as breakdown voltage and on-resistance. The '-13' suffix indicates tape and reel packaging containing 2,500 units per reel.
Replacement Considerations
Direct substitutes within the same manufacturer's portfolio include parts like the DMN2040LTS-13 or DMG4800LSD-13, provided their voltage and current ratings meet the design requirements. Verify pinout compatibility and thermal characteristics before substitution.
