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DMN2053UW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.9A SOT323. Review the specifications below when checking this part for your BOM.
The DMN2053UW-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage rating of ±12V. The device offers low on-state resistance, with a maximum RDS(ON) of 56mΩ at VGS=4.5V and 65mΩ at VGS=2.5V. Continuous drain current reaches 2.9A at +25°C. Packaged in an SOT323 case, it supports a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm compliance requirements such as RoHS and halogen-free status directly with the manufacturer's datasheet or quality declarations before finalizing procurement plans.
Select this component for circuits requiring a 20V N-channel MOSFET with low conduction losses. Evaluate thermal resistance values based on the specific PCB copper area and mounting conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.
This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to balance low on-resistance with fast switching capabilities, targeting compact power management solutions within small surface-mount packages like SOT323.
Consult official substitution lists for verified alternatives. Cross-reference pinouts, voltage ratings, and package dimensions when considering equivalent components from other manufacturers.
The maximum pulsed drain current is 20A, defined by a 10µs pulse duration with a 1% duty cycle.
Yes, the datasheet specifies a maximum body diode forward current of 1.0A and provides reverse recovery time and charge characteristics.
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