DMN2055U-7

Single FETs, MOSFETs Overview

The DMN2055U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 4.8A at +25°C. The device exhibits low on-resistance, with RDS(ON) maximums of 38mΩ at VGS=4.5V and 45mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.0V, total gate charge of 4.3nC, and input capacitance of 400pF. Thermal characteristics specify a junction-to-ambient thermal resistance of 162°C/W on FR-4 substrate.

Single FETs, MOSFETs Feature Summary

• Low on-state resistance for high efficiency power management
• Fast switching speed with low input/output leakage
• Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

• General purpose interfacing switch
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, including compliance with EU RoHS directives and halogen-free specifications. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT23 footprint is required for 20V applications. Evaluate the 4.8A continuous current rating against the expected load requirements. Consider the thermal resistance values provided for different PCB copper areas to ensure adequate heat dissipation under steady-state operating conditions without exceeding the maximum junction temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2055U series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The -7 suffix specifically denotes the standard tape and reel packaging format used for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for equivalent circuit diagrams and pinout configurations when evaluating substitutes. Verify that any replacement component matches the 20V drain-source voltage rating and the 4.8A continuous current capability. Ensure the alternative device fits within the same SOT23 mechanical outline dimensions.