DMN2055UQ-7

$0.07

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:a125926bf5fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2055UQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2055UQ-7

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2055UQ-7

DMN2055UQ-7

Single FETs, MOSFETs Overview

The DMN2055UQ-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 4.8A at +25°C. The device offers low on-resistance, specified as 38mΩ max at VGS = 4.5V and 45mΩ max at VGS = 2.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT23 package.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Fast switching speed with low input capacitance
Low input/output leakage characteristics
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

General purpose interfacing switches
Power management functions
Automotive applications requiring specific change control

Single FETs, MOSFETs Procurement Notes

Verify the component against the official datasheet DS43668 Rev. 2-2 to confirm electrical parameters and physical dimensions. Ensure compatibility with the required operating temperature range and thermal dissipation constraints. Confirm that the SOT23 package aligns with the PCB footprint design. Validate compliance with relevant environmental directives such as RoHS and REACH before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 20V N-channel MOSFET with low conduction losses. Consider the 4.8A continuous current rating and the specific RDS(ON) values at different gate voltages for drive circuit optimization. Evaluate the thermal resistance and power dissipation capabilities relative to the expected load conditions and ambient temperatures to ensure reliable operation.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2055UQ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The product is suitable for automotive applications, being AEC-Q101 qualified and PPAP capable, and is manufactured in IATF 16949 certified facilities.