DMN2055UWQ-13

$0.05

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:1a20697d0bc6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2055UWQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2055UWQ-13

Description：MOSFET BVDSS: 8V~24V SOT323 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：46mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：520mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

Single FETs, MOSFETs datasheet and documents for DMN2055UWQ-13

DMN2055UWQ-13

Single FETs, MOSFETs Overview

The DMN2055UWQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT323 surface-mount package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 3.1A at +25°C. The device exhibits a typical static drain-source on-resistance (RDS(ON)) of 46mΩ at VGS = 4.5V and 53mΩ at VGS = 2.5V. Electrical characteristics include a gate threshold voltage range of 0.4V to 1.0V, input capacitance of 400pF, and total gate charge of 4.3nC. Thermal resistance from junction to ambient is 241°C/W under steady-state conditions.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Qualified for automotive applications with AEC-Q101 certification, PPAP capability, and manufacturing in IATF 16949 certified facilities.
Totally lead-free and fully RoHS compliant, featuring halogen and antimony free green device construction.

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions
DC-DC converters
Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration when placing orders. Confirm that the component meets the required automotive quality standards if utilized in vehicle systems, as indicated by the AEC-Q101 qualification status documented in the official datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component for circuits requiring low on-resistance within a 20V voltage rating envelope. The SOT323 package is suitable for space-constrained designs. Ensure gate drive voltages align with the specified RDS(ON) test conditions of 2.5V or 4.5V to achieve optimal conduction performance and thermal management within the stated operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching capabilities suitable for various power management and switching applications across consumer and industrial electronics sectors.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, ID, and RDS(ON), as well as physical package dimensions like SOT323.