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DMN2058UW-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3.5A SOT323 T&R. Review the specifications below when checking this part for your BOM.
The DMN2058UW-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 3.5A at +25°C. The device offers low on-state resistance, specified as 42mΩ max at VGS=10V and 45mΩ max at VGS=4.5V. Packaged in a SOT323 case, it supports an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, specifically RoHS compliance and halogen/antimony-free status, as defined by the manufacturer's green product guidelines. Ensure the application environment remains within the specified thermal and electrical limits.
Select this component when a compact SOT323 package is required for 20V applications. It is suitable for designs needing low conduction losses with gate drive voltages as low as 4.5V or 10V. Consider the thermal resistance characteristics and power dissipation limits relative to the PCB copper area available for heat sinking during layout.
This part belongs to the DMN2058UW series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a molded plastic SOT323 case with matte tin annealed terminals over an alloy 42 leadframe.
The DMN2058UW-7 is a verified substitute offering identical electrical specifications but packaged in a 3000-unit tape and reel format.
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