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DMN2080UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3A X2-WLB0606-4. Review the specifications below when checking this part for your BOM.
The DMN2080UCB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing Trench-MOS technology and thin WLCSP packaging. It features a drain-source voltage (V_DSS) of 20V and a typical static drain-source on-resistance (R_DS(ON)) of 43mΩ at V_GS = 4.5V. The device supports a continuous drain current (I_D) of 4.0A at +25°C. Key electrical parameters include a gate threshold voltage (V_GS(TH)) of 0.7V typical, total gate charge (Q_g) of 7.4nC, and input capacitance (C_iss) of 540pF. Thermal characteristics specify a junction-to-ambient thermal resistance (R_θJA) of 176°C/W on a minimum FR-4 substrate, with an operating temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2 and Halogen/Antimony-free requirements as defined by the manufacturer's green product standards. Ensure the application environment respects the absolute maximum ratings for drain-source voltage and continuous source current limits under varying ambient temperatures.
Select this component when low on-state losses and fast switching performance are required in space-constrained designs. The low gate threshold voltage facilitates drive compatibility with low-voltage logic controllers. Evaluate thermal dissipation capabilities against the specified R_θJA values based on the target PCB copper area and layout constraints to ensure operation within the safe operating area.
This part belongs to the DMN2080UCB4 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a new generation of devices optimized for thin Wafer-Level Chip Scale Packaging (WLCSP). The series focuses on balancing minimal on-resistance with superior switching dynamics for compact power management solutions.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps before considering alternative manufacturers or different package types.
The typical gate threshold voltage (V_GS(TH)) is 0.7V, measured at V_DS = V_GS and I_D = 250μA.
Yes, the device includes a built-in G-S protection diode capable of withstanding 2kV Human Body Model (HBM) ESD stress.
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