Single FETs, MOSFETs DMN2080UCB4-7 product image

DMN2080UCB4-7

$0.51
  • Description:MOSFET N-CH 20V 3A X2-WLB0606-4
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:68c794cebc6d Category: Brand:

  
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DMN2080UCB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3A X2-WLB0606-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2080UCB4-7

  • Description:MOSFET N-CH 20V 3A X2-WLB0606-4
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:56mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.4 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):710mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:X2-WLB0606-4
  • Package / Case:4-XFBGA, WLBGA

Single FETs, MOSFETs datasheet and documents for DMN2080UCB4-7

DMN2080UCB4-7

Single FETs, MOSFETs Overview

The DMN2080UCB4-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing Trench-MOS technology and thin WLCSP packaging. It features a drain-source voltage (V_DSS) of 20V and a typical static drain-source on-resistance (R_DS(ON)) of 43mΩ at V_GS = 4.5V. The device supports a continuous drain current (I_D) of 4.0A at +25°C. Key electrical parameters include a gate threshold voltage (V_GS(TH)) of 0.7V typical, total gate charge (Q_g) of 7.4nC, and input capacitance (C_iss) of 540pF. Thermal characteristics specify a junction-to-ambient thermal resistance (R_θJA) of 176°C/W on a minimum FR-4 substrate, with an operating temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Trench-MOS technology designed to minimize on-state resistance for high efficiency power management applications.
  • Integrated G-S protection diode providing 2kV HBM ESD robustness.
  • Ultra-low profile X2-WLB0808-4 (Type B) CSP package with a footprint of 0.8mm x 0.8mm and height of 0.35mm.

Single FETs, MOSFETs Applications

  • DC-DC Converters
  • Battery Management Systems
  • Load Switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2 and Halogen/Antimony-free requirements as defined by the manufacturer's green product standards. Ensure the application environment respects the absolute maximum ratings for drain-source voltage and continuous source current limits under varying ambient temperatures.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state losses and fast switching performance are required in space-constrained designs. The low gate threshold voltage facilitates drive compatibility with low-voltage logic controllers. Evaluate thermal dissipation capabilities against the specified R_θJA values based on the target PCB copper area and layout constraints to ensure operation within the safe operating area.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2080UCB4 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It represents a new generation of devices optimized for thin Wafer-Level Chip Scale Packaging (WLCSP). The series focuses on balancing minimal on-resistance with superior switching dynamics for compact power management solutions.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps before considering alternative manufacturers or different package types.

Single FETs, MOSFETs FAQ

What is the typical gate threshold voltage for the DMN2080UCB4?

The typical gate threshold voltage (V_GS(TH)) is 0.7V, measured at V_DS = V_GS and I_D = 250μA.

Does the DMN2080UCB4 include ESD protection?

Yes, the device includes a built-in G-S protection diode capable of withstanding 2kV Human Body Model (HBM) ESD stress.

DMN2080UCB4-7DMN2080UCB4-7
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