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DMN2112SN-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 1.2A SC59-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2112SN-7
- Description：MOSFET N-CH 20V 1.2A SC59-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：100mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：220 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2112SN-7
Single FETs, MOSFETs Overview
The DMN2112SN-7 is a surface-mount N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and supports a continuous drain current of 1.2A at ambient temperature. The device dissipates up to 500mW of power and operates within a junction temperature range of -55°C to +150°C. Packaged in an SC-59-3 (SOT-23-3) housing, it offers a maximum on-resistance of 100 milliohms at 4.5V gate drive and 500mA current. The input capacitance is rated at a maximum of 220pF at 10V.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability with AEC-Q101 qualification for robust performance in demanding environments.
- Low on-resistance design facilitates efficient power switching and minimizes conduction losses.
- Compact SC-59-3 package enables space-saving integration into dense circuit board layouts.
Single FETs, MOSFETs Applications
- Automotive electronic systems requiring qualified semiconductor components
- General-purpose low-side switching applications
- Power management circuits in portable devices
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with current production standards. Confirm that the component meets all required automotive qualification specifications if intended for vehicle-related electronics. Check for any recent lifecycle status updates or obsolescence notices directly from Diodes Incorporated before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when a small-form-factor N-channel MOSFET with automotive certification is required. Ensure the application voltage does not exceed the 20V limit and that thermal management can handle the 500mW dissipation in the SC-59-3 package. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of single N-channel MOSFETs from Diodes Incorporated. The series is designed for general switching applications, offering a balance of electrical performance and physical compactness. The DMN2112SN-7 specifically targets markets needing reliable, space-efficient transistors for low-voltage DC load control.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides from Diodes Incorporated for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering generic SOT-23-3 N-channel MOSFETs to ensure functional equivalence.
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