ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
DMN2170U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 2.3A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2170U-7
- Description：MOSFET N-CH 20V 2.3A SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：70mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：217 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：600mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2170U-7
Single FETs, MOSFETs Overview
The DMN2170U-7 is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a 20V drain-source voltage rating and a continuous drain current of 2.3A. The device offers low on-resistance, specified as 50mΩ at VGS=4.5V, 70mΩ at VGS=2.5V, and 170mΩ at VGS=1.5V. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-23 package.
Single FETs, MOSFETs Feature Summary
- Low static drain-source on-resistance across multiple gate voltage levels
- Very low gate threshold voltage for efficient drive requirements
- ESD protected gate structure rated to 3kV
- Qualified to AEC-Q101 standards for high reliability
Single FETs, MOSFETs Applications
- Power management circuits requiring low resistance switching
- Battery protection applications
- Load switch implementations
- General purpose switching in consumer electronics
Single FETs, MOSFETs Procurement Notes
Verify the component datasheet revision (DS31182 Rev. 4) against the specific manufacturing date code markings on the physical units. Confirm that the SOT-23 package dimensions and terminal finishes match the required PCB layout specifications. Ensure compliance with RoHS and halogen-free requirements if mandated by the end product design.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with a 20V rating and approximately 2.3A continuous current capability is required. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient operating conditions and PCB copper pad layout.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode field effect transistors from Diodes Incorporated. These devices are designed for surface mount applications using a standard SOT-23 case outline. The series emphasizes low on-resistance and fast switching speeds suitable for portable and battery-powered equipment.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Diodes Incorporated DMN series parts such as DMN2170SSN-7 or DMN2170UQ-7 for alternative packaging options. Verify pinout compatibility and electrical parameter overlaps before substituting components from different manufacturers.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
