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DMN2250UFB-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 1.35A 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2250UFB-7B
- Description：MOSFET N-CH 20V 1.35A 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：170mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.1 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：94 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DFN1006-3
- Package / Case：3-UFDFN
Single FETs, MOSFETs datasheet and documents for DMN2250UFB-7B
Single FETs, MOSFETs Overview
The DMN2250UFB-7B is an N-channel enhancement mode MOSFET in an X1-DFN1006-3 package. It features a drain-source voltage of 20V and a continuous drain current of 1.35A at 25°C. The maximum on-resistance is 170mΩ at VGS=4.5V, 230mΩ at VGS=2.5V, and 250mΩ at VGS=1.8V. Gate threshold voltage is 1.0V max. Total gate charge is 1.4nC at VGS=4.5V. Input capacitance is 94pF. Power dissipation is 0.5W at 25°C. Operating temperature range is -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low on-state resistance for high efficiency power management
- Very low gate threshold voltage for easy drive compatibility
- Fast switching speed with low input capacitance
- ESD protected gate structure
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 standards if automotive reliability requirements are necessary for the design. Ensure the X1-DFN1006-3 footprint matches the PCB layout guidelines provided in the datasheet.
Single FETs, MOSFETs Selection Notes
Select this component when a 20V N-channel MOSFET with low RDS(on) is required for compact designs. The X1-DFN1006-3 package offers a small form factor suitable for space-constrained applications. Consider the 1.35A continuous current rating and thermal characteristics for heat dissipation planning in the target circuit environment.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. It utilizes silicon technology and is housed in a lead-free, RoHS-compliant X1-DFN1006-3 case. The device is designed to minimize on-state resistance while maintaining superior switching performance for modern power management needs.
Single FETs, MOSFETs Replacement Considerations
Check for direct substitutes within the same manufacturer's portfolio that share the X1-DFN1006-3 package and similar electrical parameters. Verify pinout compatibility and thermal resistance values before substitution.
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