DMN22M5UFG-13

Single FETs, MOSFETs Overview

The DMN22M5UFG-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an ultra-low on-state resistance of 2.0mΩ at VGS=4.5V and 2.6mΩ at VGS=2.5V, supporting continuous drain currents up to 27A at TC=+25°C. The device utilizes the PowerDI3333-8 package, providing high thermal efficiency in a compact footprint. Key electrical parameters include a gate-source voltage rating of ±12V, total gate charge of 53nC at VGS=4.5V, and a maximum junction temperature of +150°C.

Single FETs, MOSFETs Feature Summary

• Minimizes on-state losses through exceptionally low RDS(ON) while maintaining superior switching performance.
• PowerDI3333-8 package occupies only 33% of the board area compared to SO-8, enabling higher density designs.
• Manufactured with lead-free finish, RoHS compliant materials, and free from halogen and antimony.
• Verified for reliability via 100% unclamped inductive switching (UIS) testing during production.

Single FETs, MOSFETs Applications

• Backlighting circuits
• DC-DC converters
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for your manufacturing process. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component when space constraints are critical, as its footprint is significantly smaller than traditional SO-8 packages. It is suitable for applications requiring high current handling capabilities within a 20V system. Evaluate the thermal requirements against the specified junction-to-case resistance to ensure adequate heat dissipation for the intended duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs designed for power management. It represents a shift toward highly integrated, thermally efficient surface-mount solutions. The PowerDI technology allows for robust performance in demanding environments while reducing overall system size.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 500A with a pulse duration of 380µs and a duty cycle of 1%.

Is the device qualified for automotive applications?

For automotive applications requiring AEC-Q100/101/104/200 qualification or IATF 16949 manufacturing, customers must contact Diodes Incorporated directly.