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DMN2300UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 1.3A 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2300UFB4-7B
- Description：MOSFET N-CH 20V 1.3A 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：175mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.6 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：64.3 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2300UFB4-7B
Single FETs, MOSFETs Overview
The DMN2300UFB4-7B is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a drain-source voltage (V_DSS) of 20V and a continuous drain current (I_D) of 1.30A at +25°C. The device offers a low on-resistance (R_DS(ON)) of 175mΩ at V_GS = 4.5V and 240mΩ at V_GS = 2.5V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from 0.45V to 0.95V, total gate charge (Q_g) of 1.6nC, and power dissipation (P_D) of 500mW. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Extremely compact footprint of 0.6mm², significantly smaller than standard SOT23 packages.
- Low profile construction with a maximum height of 0.4mm for space-constrained designs.
- Optimized for high efficiency through minimized on-state resistance and fast switching speeds.
- Integrated ESD protection on the gate terminal.
Single FETs, MOSFETs Applications
- Load Switching
- High Efficiency Power Management
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm packaging details, such as reel size and quantity per reel. Ensure that the component meets all applicable RoHS and halogen-free requirements specified in the datasheet notes before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when board space is limited due to its ultra-small X2-DFN1006-3 package. It is suitable for applications requiring low on-resistance at moderate gate drive voltages, specifically 2.5V or higher. Consider the thermal resistance and power dissipation limits relative to the expected ambient temperature and load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2300 series of N-channel MOSFETs designed by Diodes Incorporated. The series focuses on providing superior switching performance alongside low on-state resistance. The specific model utilizes silicon technology and is manufactured in a lead-free, green molding compound case rated UL 94V-0.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for officially listed equivalent parts. Verify pinout compatibility, package dimensions, and electrical ratings before substituting any alternative components.
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