DMN2300UFD-7

Single FETs, MOSFETs Overview

The DMN2300UFD-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20 V and a gate-source voltage (Vgs) rating of ±8 V. The device offers low on-state resistance, specified as 200 mΩ at Vgs = 4.5 V with an Id of 900 mA, or 260 mΩ at Vgs = 2.5 V with an Id of 800 mA. Continuous drain current (Id) reaches 1.73 A at Ta = 25°C on standard PCBs. Power dissipation is rated at 0.96 W under the same conditions. The component operates within a temperature range of -55°C to +150°C and utilizes an X1-DFN1212-3 surface mount package.

Single FETs, MOSFETs Feature Summary

• Low gate threshold voltage for efficient drive requirements
• Fast switching speed suitable for high-frequency applications
• ESD protected gate structure rated up to 2 kV
• Qualified to AEC-Q101 standards for automotive reliability

Single FETs, MOSFETs Applications

• Load switch circuits
• High efficiency power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit reel quantity configuration documented in the datasheet. Confirm that the X1-DFN1212-3 package dimensions align with the target PCB footprint layout. Ensure compliance with RoHS and halogen-free material specifications if required by the end application. Check for any recent revisions to the DS35443 document that may affect electrical parameters.

Single FETs, MOSFETs Selection Notes

Select this component when a compact single N-channel MOSFET with a 20 V breakdown voltage is required. The low on-resistance characteristics make it suitable for applications prioritizing conduction loss reduction. Consider the thermal resistance values provided for both minimum pad layouts and full copper coverage scenarios during heat dissipation planning. Verify that the gate charge requirements match the driving circuit capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the DMN23 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions requiring small form factors. The DMN2300UFD variant specifically utilizes the X1-DFN1212-3 package for space-constrained designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts maintain identical 20 V Vdss ratings and compatible X1-DFN1212-3 pinouts.