DMN2310U-7

$0.17

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1330b91be9eb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2310U-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310U-7

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：480mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2310U-7

DMN2310U-7

Single FETs, MOSFETs Overview

The DMN2310U-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 1.6A at +25°C ambient temperature. The device offers low on-state resistance, specified as 175mΩ maximum at VGS = 4.5V, 240mΩ at VGS = 2.5V, and 360mΩ at VGS = 1.8V. It operates within a junction temperature range of -55°C to +150°C and utilizes a SOT-23 package.

Single FETs, MOSFETs Feature Summary

Low gate threshold voltage for efficient drive capability
Fast switching speed with minimized on-state resistance
ESD protected gate structure

Single FETs, MOSFETs Applications

Load switches

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm RoHS compliance status and halogen-free classification requirements prior to procurement. Ensure the selected variant matches the required tape and reel specifications for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power-management applications requiring low on-resistance and superior switching performance. Evaluate thermal resistance characteristics relative to the intended PCB copper area and mounting conditions. Consider the gate threshold voltage limits when designing control circuits for varying load currents.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are designed to minimize on-state resistance while maintaining fast switching capabilities. The series targets applications demanding high efficiency in power management systems.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution lists for verified equivalent parts. Verify pinout compatibility, electrical ratings, and package dimensions before implementing any alternative components.