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DMN2310UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X2-DFN1006-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2310UFB4-7B
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：175mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：710mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2310UFB4-7B
Single FETs, MOSFETs Overview
The DMN2310UFB4-7B is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) of ±8 V. The device offers a maximum on-resistance (R_DS(ON)) of 175 mΩ at V_GS = 4.5 V with a continuous drain current (I_D) of 2.1 A at +25°C. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN1006-3 package.
Single FETs, MOSFETs Feature Summary
- Footprint reduced to 0.6mm², significantly smaller than SOT-23 packages
- Low profile construction suitable for space-constrained applications
- Integrated ESD protection on the gate terminal
- Designed for high-efficiency power management with minimized on-state resistance
Single FETs, MOSFETs Applications
- Load switches
- High-efficiency power-management applications
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix '-7B' corresponds to the specified reel size and tape width in the manufacturer's documentation. Confirm that the X2-DFN1006-3 package dimensions align with the target PCB pad layout requirements. Ensure compliance with RoHS and halogen-free specifications if required by the end application standards.
Single FETs, MOSFETs Selection Notes
Select this component when a compact footprint is critical compared to standard SOT-23 transistors. Evaluate the thermal resistance characteristics against the specific copper area available on the PCB. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2310 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching speeds. The DMN2310UFB4 variant specifically utilizes the X2-DFN1006-3 package to achieve a minimal physical profile.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other DMN2310 variants such as DMN2310UFD or DMN2310UT, provided the package type matches the design constraints. Verify pinout compatibility and electrical parameters before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
