DMN2310UT-13

$0.05

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ba0289ee5984 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2310UT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2310UT-13

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：240mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：38 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：290mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Single FETs, MOSFETs datasheet and documents for DMN2310UT-13

DMN2310UT-13

Single FETs, MOSFETs Overview

The DMN2310UT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±8 V. The device offers a maximum static drain-source on-resistance (R_DS(ON)) of 240 mΩ at V_GS = 4.5 V with a continuous drain current (I_D) of 1.2 A, or 300 mΩ at V_GS = 2.5 V with I_D of 1.04 A. Total gate charge (Q_g) is typically 0.7 nC. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT523 surface-mount package.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package for space-constrained designs
Low input capacitance and fast switching speed
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

DC-DC converters
Load switches
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the selected part number matches the required automotive or industrial qualification levels if specific change control or PPAP capabilities are necessary for the target application.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and superior switching performance are critical for high-efficiency power management applications. Consider the 20 V drain-source voltage limit and the 1.2 A continuous current capability at 25°C ambient temperature. Evaluate the thermal resistance characteristics based on the specific PCB copper area and mounting conditions to ensure safe operation within the specified junction temperature limits.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining fast switching speeds. The product line includes variants with different packaging options and automotive qualifications, such as the DMN2310UTQ.