DMN2400UFB-7

$0.26

Description：MOSFET N-CH 20V 750MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e0439b4d4988 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2400UFB-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 750MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2400UFB-7

Description：MOSFET N-CH 20V 750MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：470mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN2400UFB-7

DMN2400UFB-7

Single FETs, MOSFETs Overview

The DMN2400UFB-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 0.75A at +25°C. The device exhibits a maximum on-resistance of 0.55Ω at VGS=4.5V and 0.75Ω at VGS=2.5V. Total power dissipation is rated at 0.47mW, with a thermal resistance junction-to-ambient of 258°C/W. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package for space-constrained designs
Low gate threshold voltage for efficient drive requirements
ESD protection up to 1.5kV
Qualified to AEC-Q101 standards for high reliability

Single FETs, MOSFETs Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity. The DMN2400UFB-7 variant utilizes a tape and reel format containing 3,000 units per reel. Confirm compliance with RoHS directives and ensure the component meets halogen-free specifications if required by the design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance and fast switching speed are critical for high-efficiency power management. Ensure the application operates within the specified 20V drain-source voltage limit and accounts for the 0.47mW power dissipation capability in the X1-DFN1006-3 package.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2400UFB series of N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in an X1-DFN1006-3 case, utilizing a molded plastic green molding compound with UL flammability classification rating 94V-0.