DMN2400UFB4-7B

Description：MOSFET N-CH X2-DFN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:f77109f0d3be Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2400UFB4-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH X2-DFN1006-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2400UFB4-7B

Description：MOSFET N-CH X2-DFN1006-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.5 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：470mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2400UFB4-7B

DMN2400UFB4-7B

Single FETs, MOSFETs Overview

The DMN2400UFB4-7B is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 surface mount package with a maximum height of 0.4mm. The device supports a continuous drain current of 0.75A at 25°C and withstands a pulsed drain current of 3A. Electrical characteristics include a gate-source breakdown voltage of ±12V, a typical static drain-source on-resistance of 0.55Ω at VGS=4.5V, and a gate threshold voltage ranging from 0.5V to 0.9V. Thermal resistance from junction to ambient is specified at 258°C/W.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package with ultra-low profile
Qualified to AEC-Q101 standards for high reliability
Totally lead-free and fully RoHS compliant
ESD protected up to 1.5kV

Single FETs, MOSFETs Applications

Battery protection circuits
Power management applications
General purpose switching

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement as the datasheet explicitly states this part is not recommended for new designs. Confirm that the specific ordering suffix matches the required reel size and tape pitch specifications. Ensure compliance with the manufacturer's quality definitions regarding halogen and antimony-free materials if environmental regulations apply to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component for space-constrained designs requiring a low-profile N-channel MOSFET. Consider the thermal limitations indicated by the high junction-to-ambient resistance when designing PCB layouts. Evaluate the DMN2450UFB4 as a potential alternative due to the explicit recommendation against using this part in new designs.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of small signal field-effect transistors produced by Diodes Incorporated. It utilizes silicon metal-oxide semiconductor technology within a molded plastic case classified as UL 94V-0. The product line targets applications demanding efficient power switching in compact form factors while maintaining automotive-grade reliability standards.