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DMN2400UFDQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 900MA 3DFN. Review the specifications below when checking this part for your BOM.
The DMN2400UFDQ-7 is a single-channel N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 20V drain-source breakdown voltage and supports a continuous drain current of 900mA. The device exhibits a maximum on-resistance of 350mΩ and a gate-source threshold voltage of 450mV. Packaged in a U-DFN1212-3 surface-mount footprint, it operates within a temperature range of -55°C to +150°C with a power dissipation rating of 800mW.
Verify the specific suffix 'Q' indicates AEC-Q101 qualification status directly from the manufacturer datasheet. Confirm the U-DFN1212-3 package dimensions match PCB layout requirements. Check current availability as some sources indicate limited distribution or discontinuation status for this specific variant.
Select this component when automotive-grade reliability is required alongside minimal board space constraints. The 20V rating suits low-voltage systems, while the 900mA current capacity fits moderate load applications. Ensure thermal management accommodates the 800mW dissipation limit in the small DFN package.
This part belongs to Diodes Incorporated's DMN series of small signal MOSFETs designed for compact consumer and industrial electronics. The Q-suffix typically denotes automotive qualification, distinguishing it from standard commercial variants like the DMN2400UFD. It serves as a high-reliability alternative for space-constrained designs.
Cross-reference with DMN2400UFD for non-automotive equivalents. Verify pinout compatibility with U-DFN1212-3 packages before substitution.
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