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DMN2451UFB4Q-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X2-DFN1006-. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2451UFB4Q-7B
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：32 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2451UFB4Q-7B
Single FETs, MOSFETs Overview
The DMN2451UFB4Q is an N-channel enhancement mode MOSFET designed for high-efficiency power management. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 1.3A at +25°C. The device offers low on-state resistance, with RDS(ON) values of 0.4Ω at VGS=4.5V, 0.5Ω at VGS=2.5V, and 0.7Ω at VGS=1.8V. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN1006-3 package.
Single FETs, MOSFETs Feature Summary
- Extremely compact footprint of 0.6mm², significantly smaller than SOT23 packages
- Low profile construction with a 0.4mm height suitable for space-constrained designs
- Optimized for fast switching speeds and low gate threshold voltage operation
- Integrated ESD protection on the gate terminal
Single FETs, MOSFETs Applications
- Load Switching
- Automotive Power Management Systems
Single FETs, MOSFETs Procurement Notes
Verify that the specific ordering suffix matches the required packaging format, such as reel sizes or tape widths. Confirm AEC-Q101 qualification status if automotive compliance is mandatory. Ensure the selected variant aligns with the intended manufacturing process requirements and facility certifications.
Single FETs, MOSFETs Selection Notes
Select this component when minimizing board area is critical due to its ultra-small footprint. Consider the low gate threshold voltage for compatibility with lower drive voltages. Evaluate thermal performance based on the specific PCB copper layout and ambient operating conditions to ensure safe junction temperatures.
Single FETs, MOSFETs Part Context
This part belongs to Diodes Incorporated's DMN series of N-channel MOSFETs. It is specifically engineered to balance low on-resistance with superior switching performance. The device is manufactured in IATF 16949 certified facilities and supports PPAP requirements for automotive supply chains.
Single FETs, MOSFETs Replacement Considerations
Check pinout compatibility and electrical ratings against existing components. Verify that alternative devices meet the same package dimensions and thermal characteristics.
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