DMN2451UFDQ-13

Single FETs, MOSFETs Overview

The DMN2451UFDQ-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN1212-3 (Type C) surface-mount package and operates within a drain-source voltage range of -55°C to +150°C. The device provides a maximum drain-source breakdown voltage of 20V and a continuous drain current of 1.1A at 25°C. Static drain-source on-resistance is specified as 0.6Ω max at VGS=4.5V, 0.8Ω max at VGS=2.5V, 1.0Ω max at VGS=1.8V, and 1.6Ω max at VGS=1.5V. Total gate charge is typically 0.7nC.

Single FETs, MOSFETs Feature Summary

• Low on-resistance optimized for high-efficiency power management applications
• Very low gate threshold voltage with ESD protected gate structure
• Fast switching speed combined with low input capacitance
• Qualified for automotive applications requiring specific change control

Single FETs, MOSFETs Applications

• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Load Switch

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS41445 Rev. 3-2 to confirm authenticity and specifications. Ensure that the ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 10,000 units. Confirm compliance with RoHS, lead-free, halogen-free, and antimony-free requirements as defined in the manufacturer's quality product definitions before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact N-channel MOSFET with low on-resistance at reduced gate drive voltages. The U-DFN1212-3 package is suitable for space-constrained designs. Verify that the 20V drain-source voltage rating meets the system's peak voltage requirements. Consider the thermal resistance characteristics and ensure adequate PCB copper area or thermal vias are utilized to manage junction temperature effectively during operation.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic case with UL flammability classification rating 94V-0. The terminals feature a NiPdAu finish over a copper leadframe, ensuring solderability per MIL-STD-208 standards. The device is designed to minimize self-heating effects through short duration pulse testing methodologies.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.