DMN24H3D5L-13

Single FETs, MOSFETs Overview

The DMN24H3D5L-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT-23 surface-mount package. It features a drain-source voltage rating of 240 V and a continuous drain current of 0.48 A at 25°C. The device exhibits a maximum on-resistance of 3.5 Ω at VGS = 10V and 4.5V, with a total gate charge of 6.6 nC. Thermal characteristics include a junction-to-ambient resistance of 163 °C/W and a power dissipation of 0.76 W.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
• Features low gate threshold voltage and low input capacitance to support fast switching speeds.
• Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free.

Single FETs, MOSFETs Applications

• DC-DC Converters
• Power Management Functions
• Battery Operated Systems
• Solid-State Relays
• Drivers for relays, solenoids, lamps, and displays

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, including being totally lead-free and compliant with EU Directives 2002/95/EC and 2011/65/EU. Ensure the application environment remains within the specified operating temperature range of -55°C to 150°C.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage isolation up to 240 V in a compact SOT-23 footprint. The low gate charge and fast switching characteristics make it suitable for high-frequency power management circuits. Evaluate thermal constraints carefully, as the small package limits total power dissipation to 0.76 W under standard FR-4 board conditions without additional copper pad layout optimization.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The 'DMN24H3D5L' designation indicates a 240 V breakdown voltage device optimized for low on-resistance. The suffix '-13' specifically denotes the 10,000-piece tape and reel packaging format used for automated surface-mount assembly processes.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Diodes Incorporated parts sharing the DMN24 prefix or similar 240 V SOT-23 specifications. Verify pinout compatibility and ensure replacement devices meet or exceed the 240 V drain-source voltage and 0.48 A continuous current ratings.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating for the DMN24H3D5L?

The maximum drain-source voltage (VDSS) rating is 240 V.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage decreases as the ambient temperature increases, as illustrated in the typical junction temperature variation graphs provided in the datasheet.

Is the DMN24H3D5L suitable for life support applications?

No, Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without express written approval from the Chief Executive Officer.