DMN2500UFB4-7

$0.21

Description：MOSFET N-CH 20V 810MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:03f68973a997 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2500UFB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 810MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2500UFB4-7

Description：MOSFET N-CH 20V 810MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.74 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：60.67 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：460mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2500UFB4-7

DMN2500UFB4-7

Single FETs, MOSFETs Overview

The DMN2500UFB4-7 is a single N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 surface-mount package. It features a drain-source voltage (VDSS) of 20V and a maximum gate-source voltage (VGSS) of ±6V. The device provides a continuous drain current (ID) of 810mA at 25°C with a static on-resistance (RDS(ON)) of 0.4Ω at VGS=4.5V. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-small surface mount package with ultra-low profile height
ESD protected gate structure for enhanced reliability
Qualified to AEC-Q101 standards for high-reliability applications

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm the specific ordering suffix matches the required tape and reel quantity. Ensure compliance with RoHS and halogen-free requirements as specified in the manufacturer documentation before final procurement integration.

Single FETs, MOSFETs Selection Notes

Evaluate thermal resistance values based on the specific PCB copper area and substrate type used in the design. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Assess power dissipation limits against the expected ambient operating temperatures to ensure safe junction temperatures are maintained.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is manufactured by Diodes Incorporated. The part is specifically engineered to minimize on-state resistance while maintaining superior switching performance characteristics.