DMN2550UFA-7B

$0.24

Description：MOSFET N-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d0cb88a0f0a9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2550UFA-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 600MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2550UFA-7B

Description：MOSFET N-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.88 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：52.5 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN2550UFA-7B

DMN2550UFA-7B

Single FETs, MOSFETs Overview

The DMN2550UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 0.6 A at 25°C. The device offers low on-state resistance, with a maximum Rds(on) of 0.45 Ω at Vgs = 4.5 V and Id = 200 mA. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 360 mW. The component is housed in an X2-DFN0806-3 surface-mount package.

Single FETs, MOSFETs Feature Summary

Low on-resistance optimized for high efficiency power management applications
Very low gate threshold voltage enabling effective operation at reduced drive voltages
ESD protected gate structure ensuring enhanced reliability during handling
Totally lead-free and fully RoHS compliant construction

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions
Analog switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component version aligns with the latest datasheet revision to ensure accurate electrical parameters. Ensure compliance with environmental directives such as RoHS and REACH requirements relevant to your manufacturing region. Validate that the supplier provides traceability documentation for the batch received.

Single FETs, MOSFETs Selection Notes

Select this component when a compact footprint is required due to its significantly smaller package size compared to traditional SOT-23 alternatives. Consider the low gate threshold voltage for compatibility with logic-level drivers or battery-powered systems. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure adequate heat dissipation without external cooling measures.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2550 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. These devices are designed specifically for high-efficiency power management applications where space constraints and low power consumption are critical design factors.