DMN25D0UFA-7B

$0.31

Description：MOSFET N-CH 25V 240MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:5487cac83de2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN25D0UFA-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 25V 240MA 3DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN25D0UFA-7B

Description：MOSFET N-CH 25V 240MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.36 nC @ 4.5 V
Vgs (Max)：8V
Input Capacitance (Ciss) (Max) @ Vds：27.9 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：280mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

Single FETs, MOSFETs datasheet and documents for DMN25D0UFA-7B

DMN25D0UFA-7B

Single FETs, MOSFETs Overview

The DMN25D0UFA-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 25V and a continuous drain current of 0.32A at +25°C. The device offers a low on-state resistance of 4Ω at VGS = 4.5V and 5Ω at VGS = 2.7V. Total gate charge is typically 0.36nC, with turn-on delay time at 2.9ns and turn-off delay time at 6.6ns. Power dissipation reaches 0.63W on high coverage copper PCBs. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Ultra-low profile package design for thin applications
Low gate threshold voltage enabling direct battery drive
ESD protected gate exceeding 6kV human body mode rating

Single FETs, MOSFETs Applications

Load switch circuits
Portable electronic devices
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix matches the required packaging format. Confirm RoHS compliance status and AEC-Q101 qualification requirements against specific project reliability standards. Ensure thermal management aligns with FR-4 board constraints. Check for halogen-free specifications if environmental regulations apply. Validate pinout compatibility during integration.

Single FETs, MOSFETs Selection Notes

Evaluate RDS(on) performance at expected gate drive voltages to ensure efficiency targets are met. Consider thermal resistance values based on actual PCB copper coverage and ambient conditions. Assess switching speeds relative to system clock frequencies. Verify ESD protection levels match handling requirements. Compare package dimensions against available board space constraints.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology within an X2-DFN0806-3 case. The product line emphasizes minimized on-state resistance while maintaining superior switching performance characteristics suitable for compact consumer electronics.