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DMN26D0UFB4-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 230MA 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN26D0UFB4-7
- Description：MOSFET N-CH 20V 230MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：14.1 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN26D0UFB4-7
Single FETs, MOSFETs Overview
The DMN26D0UFB4 is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN1006-3 package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 240mA at +25°C with VGS=4.5V. The static drain-source on-resistance (RDS(ON)) is specified as 3.0Ω max at VGS=4.5V and 6.0Ω max at VGS=1.8V. The device operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface mount package with a maximum height of 0.4mm
- Low input capacitance for fast switching speed
- Very low gate threshold voltage for efficient drive
- ESD protected gate structure
Single FETs, MOSFETs Applications
- DC-DC Converters
- Power Management Functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix when purchasing. The DMN26D0UFB4-7 variant comes in a 3,000-unit tape and reel, while the DMN26D0UFB4-7B variant is packaged in 10,000 units. Confirm that the required packaging quantity aligns with the specific suffix selected during procurement to ensure compatibility with manufacturing equipment.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-efficiency power management where space constraints are critical due to its ultra-small footprint. It is suitable for low-voltage circuits operating up to 20V. Ensure the driving circuit can provide sufficient gate voltage to achieve the lowest possible on-resistance, particularly if operating at lower gate drive levels like 1.8V.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product is fully RoHS compliant and halogen-free, meeting environmental standards for modern electronics manufacturing.
Single FETs, MOSFETs Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout and thermal characteristics before substituting with other X2-DFN1006-3 packages.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
