DMN2710UFBQ-7B

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:d6023e19b07d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2710UFBQ-7B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V X1-DFN1006-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2710UFBQ-7B

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：720mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Single FETs, MOSFETs datasheet and documents for DMN2710UFBQ-7B

DMN2710UFBQ-7B

Single FETs, MOSFETs Overview

The DMN2710UFBQ-7B is an N-channel enhancement mode MOSFET in an X1-DFN1006-3 package. It features a drain-source voltage (VDSS) of 20V and a continuous drain current (ID) of 1.3A at +25°C. The static drain-source on-resistance (RDS(ON)) is 0.45Ω max at VGS = 4.5V, and 0.6Ω max at VGS = 2.5V. Total gate charge (Qg) is typically 0.6nC. Operating temperature range is -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Footprint reduced by 13 times compared to SOT23
Low gate threshold voltage for efficient drive
Fast switching speed with low gate charge
ESD protected gate structure

Single FETs, MOSFETs Applications

Portable electronics
Automotive applications requiring specific change control
High-efficiency power management

Single FETs, MOSFETs Procurement Notes

Verify the AEC-Q101 qualification status and IATF 16949 manufacturing origin if automotive compliance is required. Confirm the '7B' suffix indicates a 10,000-unit tape and reel packing quantity. Ensure the selected component matches the X1-DFN1006-3 mechanical outline dimensions for PCB layout compatibility.

Single FETs, MOSFETs Selection Notes

Select this part when minimizing board space is critical due to its ultra-small footprint. Choose based on the 20V breakdown voltage and 1.3A continuous current capability. Evaluate RDS(ON) performance at the specific system gate drive voltage, as resistance varies significantly between 4.5V and 2.5V logic levels.

Single FETs, MOSFETs Part Context

This component belongs to Diodes Incorporated's DMN series of small-signal N-channel MOSFETs. It utilizes silicon technology and is designed for high-efficiency switching applications. The device is manufactured in facilities certified under IATF 16949 standards.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering identical X1-DFN1006-3 footprints and matching 20V/1.3A ratings. Verify that substitute components meet the same AEC-Q101 automotive qualification requirements if applicable.