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DMN2710UT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2710UT-7
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：870mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.6 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：42 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：320mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN2710UT-7
Single FETs, MOSFETs Overview
The DMN2710UT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 0.87A at +25°C. The device offers low on-resistance, specified as 0.45Ω max at VGS = 4.5V and 0.6Ω max at VGS = 2.5V. It operates within a junction temperature range of -55°C to +150°C and utilizes an ultra-small SOT523 surface mount package.
Single FETs, MOSFETs Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Single FETs, MOSFETs Applications
- DC-DC converters
- Load switches
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free requirements, before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring compact footprints and efficient power handling. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance. Evaluate thermal constraints based on the provided junction-to-ambient resistance values.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance, targeting modern portable electronics and battery-powered systems.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility with other manufacturers' components without rigorous electrical validation.
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