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DMN2710UW-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT323 T&R. Review the specifications below when checking this part for your BOM.
The DMN2710UW-7 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.9A at +25°C. The device offers low on-state resistance, specified as 0.45Ω max at VGS = 4.5V and 0.6Ω max at VGS = 2.5V. Packaged in an SOT323 case with 3,000 units per tape and reel, it supports a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging quantity. Confirm that the component meets all applicable regulatory standards for the intended market. Ensure proper handling procedures are followed due to electrostatic discharge sensitivity. Review the datasheet for thermal management requirements during integration.
Select this component when a low-voltage, single-channel N-channel MOSFET is required for compact designs. Consider the SOT323 package size for space-constrained PCB layouts. Evaluate the gate threshold voltage and on-resistance characteristics against the driving circuit capabilities to ensure optimal switching efficiency.
This part belongs to the DMN2710UW series of N-channel enhancement mode MOSFETs. It is designed for general-purpose switching and power management tasks. The product utilizes silicon technology and is housed in a standard SOT323 surface-mount package suitable for automated assembly processes.
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and package dimensions before substitution.
The maximum drain-source voltage (BVDSS) is rated at 20V.
For automotive applications requiring specific change control or AEC-Q qualification, contact Diodes Incorporated directly.
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