ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.28 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：14.6 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Download product information
Overview
The DMN2991UFB4Q-7B is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features an X2-DFN1006-3 package with a footprint of 0.6mm² and a profile of 0.4mm. The device provides a maximum drain-source voltage (VDSS) of 20V and continuous drain current (ID) up to 0.5A at +25°C. Static drain-source on-resistance (RDS(ON)) is specified as 0.99Ω max at VGS=4.5V, 1.2Ω max at VGS=2.5V, and 1.8Ω max at VGS=1.8V. Total gate charge (Qg) is typically 0.28nC. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Extremely compact X2-DFN1006-3 package offering a footprint thirteen times smaller than SOT23 for space-constrained designs.
- Low gate threshold voltage enabling efficient drive from low-voltage logic sources.
- Fast switching speed characteristics suitable for high-frequency power management applications.
- Internal ESD protection diode integrated between the gate and source terminals.
Applications
- Load switches
- High-efficiency power-management circuits
Procurement Notes
Verify that the specific ordering suffix matches the required packaging quantity and carrier type. Confirm AEC-Q101 qualification status if automotive compliance is mandatory. Ensure the component meets IATF16949 manufacturing standards for relevant supply chain requirements. Check RoHS and halogen-free declarations against current regulatory directives before finalizing procurement specifications.
Selection Notes
Select this component when board real estate is limited due to its minimal 0.6mm² footprint. Choose this part for applications requiring operation from low gate drive voltages such as 1.8V or 2.5V. Consider this device for systems needing robust thermal performance within a small surface-mount package. Verify that the 20V breakdown voltage aligns with the system's maximum operating conditions.
Part Context
This component belongs to the DMN2991 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching capabilities. The Q suffix indicates AEC-Q101 qualification and PPAP capability for automotive use. The device utilizes silicon technology housed in a molded plastic green molding compound.
Replacement Considerations
Consult official manufacturer substitution lists for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative packages like SOT23-3. Verify that any substitute maintains the same gate threshold voltage characteristics and thermal resistance values.
