DMN2991UFZ-7B

$0.29

Description：MOSFET N-CH 20V 550MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e6cefe8ba593 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 550MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：530mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0606-3
Package / Case：3-XFDFN

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DMN2991UFZ-7B

Overview

The DMN2991UFZ-7B is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 0.55A at +25°C. The device offers low on-state resistance, specified as 0.99Ω max at VGS=4.5V and 1.2Ω max at VGS=2.5V. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN0606-3 package.

Feature Summary

Designed for high-efficiency power-management applications with minimized on-state resistance.
Features a very low gate threshold voltage of 1.0V maximum.
Includes ESD protection on the gate terminal.
Compliant with RoHS directives and halogen/antimony-free standards.

Applications

General-purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the 10k Tape & Reel carrier configuration. Confirm that the component meets all applicable environmental compliance requirements, including RoHS and lead-free definitions. Ensure the selected part matches the required thermal and electrical specifications for the intended circuit design before finalizing procurement.

Selection Notes

Select this component for designs requiring a compact footprint with a 0.62mm x 0.62mm package size. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target application environment.

Part Context

This component belongs to the DMN2991UFZ series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to balance low on-state resistance with superior switching performance. The series targets general-purpose switching and power management tasks in portable and battery-operated electronics.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet designation DMN2991UFZQ. Verify if automotive qualification is required for the specific application environment before selecting this alternative.