DMN2991UFZQ-7B

$0.04

Description：MOSFET BVDSS: 8V~24V X2-DFN0606-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:2bdd69a1ea6c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN0606-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.28 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：14.6 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：450mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0606-3
Package / Case：3-XFDFN

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DMN2991UFZQ-7B

Overview

The DMN2991UFZQ-7B is a 20V N-channel enhancement mode MOSFET in an X2-DFN0606-3 package. It features a maximum drain-source voltage of 20V and a continuous drain current of 0.55A at 25°C. The on-resistance is 0.99Ω max at VGS=4.5V, with a gate threshold voltage of 1.0V max. Thermal resistance (junction-to-ambient) is 279°C/W steady state. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for low on-state resistance while maintaining superior switching performance.
Features a very low gate threshold voltage of 1.0V maximum.
Includes ESD protection on the gate terminal.
Qualified for automotive applications under AEC-Q101 standards.

Applications

General-purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes Incorporated documentation to confirm tape and reel packaging quantities. Ensure the component meets RoHS 3 and halogen-free requirements as specified in the datasheet notes. Confirm that the X2-DFN0606-3 package dimensions align with your PCB footprint design constraints.

Selection Notes

Select this component when a compact 0.62mm x 0.62mm footprint is required for low-voltage switching. The 20V rating suits low-side or high-side logic-level control applications. Consider the thermal resistance limits for steady-state operation and ensure the gate drive voltage supports the desired on-resistance characteristics.

Part Context

This part belongs to the DMN2991 series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molded plastic package. The device is designed for high-efficiency power management and general-purpose switching tasks.

Replacement Considerations

Consult the manufacturer's official documentation for verified equivalent part numbers. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions to ensure functional compatibility without circuit redesign.

FAQ

Is the DMN2991UFZQ-7B suitable for automotive applications?

Yes, the DMN2991UFZQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.