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DMN2991UT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2991UT-13
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN2991UT-13
Single FETs, MOSFETs Overview
The DMN2991UT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and operates within a temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 0.3A at 25°C, with a maximum static drain-source on-resistance (RDS(ON)) of 3Ω at VGS = 4.5V and 4Ω at VGS = 2.5V. It utilizes a SOT523 surface mount package.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface mount package for space-constrained designs
- Low gate threshold voltage for efficient low-voltage drive applications
- ESD protected gate structure for enhanced reliability
- Totally lead-free and fully RoHS compliant construction
Single FETs, MOSFETs Applications
- DC-DC converters
- Load switch circuits
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS and halogen-free requirements, as specified in the manufacturer's documentation before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with a 20V rating. Ensure the design accommodates the specified RDS(ON) values at the intended gate drive voltages. Verify thermal management capabilities against the junction-to-ambient thermal resistance limits provided in the datasheet for steady-state operations.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining superior switching performance. The series targets high-efficiency power management solutions in portable and battery-operated electronic systems.
Single FETs, MOSFETs Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pinouts, electrical ratings, and package dimensions to ensure compatibility.
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