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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMN2991UT-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (BVDSS) of 20V and operates within a temperature range of -55°C to +150°C. The device offers low on-resistance, with RDS(ON) values of 3Ω at VGS=4.5V/ID=100mA, 4Ω at VGS=2.5V/ID=50mA, and 6Ω at VGS=1.8V/ID=20mA. Continuous drain current reaches 0.3A at 25°C. Key electrical parameters include a maximum gate threshold voltage of 1.0V, input capacitance of 21.5pF, and total gate charge of 0.35nC. It utilizes a SOT523 surface-mount package.
Feature Summary
- Ultra-small SOT523 surface mount package for space-constrained designs
- Low on-resistance optimized for high efficiency power management
- Very low gate threshold voltage enabling operation with low drive signals
- ESD protected gate structure
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. Confirm RoHS compliance status and environmental declarations directly from the manufacturer's datasheet or quality definitions page before procurement. Ensure the component meets all applicable automotive or industrial qualification requirements if intended for such environments.
Selection Notes
Select this component for applications requiring a compact N-channel MOSFET with low on-resistance at reduced gate voltages. Evaluate thermal resistance and power dissipation limits relative to the PCB copper area and ambient conditions. Verify that the 20V breakdown voltage and 0.3A continuous current ratings exceed the maximum circuit demands under all operating temperatures.
Part Context
This part belongs to the DMN2991 series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed as a new generation device to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions in ultra-small packages.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts. Cross-reference critical parameters such as BVDSS, RDS(ON), ID, and package dimensions to ensure functional compatibility.
