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DMN2991UTQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2991UTQ-13
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：280mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
Single FETs, MOSFETs datasheet and documents for DMN2991UTQ-13
Single FETs, MOSFETs Overview
The DMN2991UTQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and operates within a junction temperature range of -55°C to +150°C. The device provides a continuous drain current (ID) of 0.3A at 25°C, with a static drain-source on-resistance (RDS(ON)) of 3Ω at VGS = 4.5V and 4Ω at VGS = 2.5V. It utilizes an SOT523 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Ultra-small SOT523 surface mount package
- Low gate threshold voltage for efficient drive
- Fast switching speed and low input capacitance
- ESD protected gate structure
Single FETs, MOSFETs Applications
- DC-DC converters
- Load switch circuits
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if automotive application standards are necessary. Ensure compliance with IATF 16949 manufacturing facility specifications for relevant supply chain controls.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact footprint and low-voltage operation. The low gate threshold voltage supports control from low-voltage logic sources. Evaluate thermal dissipation capabilities carefully due to the small package size and high thermal resistance in steady-state conditions.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. It is specifically qualified for automotive applications requiring strict change control protocols. The device is manufactured in IATF 16949 certified facilities and holds AEC-Q101 qualification status.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility.
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