DMN2991UTQ-7

$0.28

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:82743bc32912 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2991UTQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT523 T&R. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2991UTQ-7

Description：MOSFET BVDSS: 8V~24V SOT523 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：21.5 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：280mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-523
Package / Case：SOT-523

Single FETs, MOSFETs datasheet and documents for DMN2991UTQ-7

DMN2991UTQ-7

Single FETs, MOSFETs Overview

The DMN2991UTQ is an N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a SOT523 surface-mount package. It features a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 0.3A at +25°C. The device exhibits low on-resistance (RDS(ON)) ranging from 3Ω to 6Ω depending on gate drive conditions. Key electrical parameters include a maximum gate threshold voltage of 1.0V, input capacitance of 21.5pF, and total gate charge of 0.35nC. It operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage enabling easy drive compatibility
Fast switching speed with low input/output leakage
ESD protected gate structure

Single FETs, MOSFETs Applications

DC-DC Converters
Load Switch
Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm RoHS compliance status and automotive qualification requirements such as AEC-Q101 and PPAP capability before finalizing procurement. Ensure the selected variant matches the required tape and reel dimensions for automated assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with low gate threshold voltage is required for space-constrained designs. Evaluate the RDS(ON) performance at the specific operating gate voltage to ensure adequate efficiency. Consider the thermal resistance characteristics and package size for heat dissipation needs in portable or high-density applications.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It is designed for general-purpose switching applications requiring small form factors. The device is suitable for automotive applications meeting specific change control standards and is manufactured in IATF 16949 certified facilities.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same manufacturer's portfolio that offer similar voltage and current ratings. Verify that any substitute maintains the required SOT523 package dimensions and electrical characteristics such as gate threshold voltage and on-resistance.

Single FETs, MOSFETs FAQ

Is the DMN2991UTQ qualified for automotive applications?

Yes, the DMN2991UTQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.